KSC5402DTF
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 525V 2A TO252AA
TRANS NPN 525V 2A TO252AA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 525 V 2 A 11 MHz 30 W surface-mounted TO-252AA
Bipolar (BJT) Transistor NPN 525 V 2 A 11 MHz 30 W surface-mounted TO-252AA
Description
Description
The KSC5402DTF is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 525 V, a collector current of 2 A, and a current gain bandwidth of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. It also includes a built-in freewheeling diode, enhancing its performance in electronic ballast applications.
The KSC5402DTF is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 525 V, a collector current of 2 A, and a current gain bandwidth of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. It also includes a built-in freewheeling diode, enhancing its performance in electronic ballast applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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