KSC5026MOS
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 800V 1.5A TO126-3
TRANS NPN 800V 1.5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 800 V 1.5 A 15 MHz 20 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 800 V 1.5 A 15 MHz 20 W Through Hole TO-126-3
Description
Description
The KSC5026MOS is a high-voltage NPN bipolar transistor designed for applications requiring high reliability and fast switching. It features a collector-emitter voltage of 800 V, a collector current of 1.5 A, and a power dissipation of 20 W. This TO-126-3 package transistor operates effectively at frequencies up to 15 MHz, making it suitable for various electronic applications.
The KSC5026MOS is a high-voltage NPN bipolar transistor designed for applications requiring high reliability and fast switching. It features a collector-emitter voltage of 800 V, a collector current of 1.5 A, and a power dissipation of 20 W. This TO-126-3 package transistor operates effectively at frequencies up to 15 MHz, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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