KSC3503DS
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 300V 0.1A TO126-3
TRANS NPN 300V 0.1A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 300 V 100 mA 150MHz 7 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 300 V 100 mA 150MHz 7 W Through Hole TO-126-3
Description
Description
The KSC3503DS is a high-voltage NPN bipolar junction transistor (BJT) with a collector-emitter voltage (VCEO) rating of 300 V and a collector current (IC) of 100 mA. It operates at a frequency of 150 MHz and features low reverse transfer capacitance (Cre) of 1.8 pF. This device is suitable for audio amplification, voltage amplification, and general-purpose applications.
The KSC3503DS is a high-voltage NPN bipolar junction transistor (BJT) with a collector-emitter voltage (VCEO) rating of 300 V and a collector current (IC) of 100 mA. It operates at a frequency of 150 MHz and features low reverse transfer capacitance (Cre) of 1.8 pF. This device is suitable for audio amplification, voltage amplification, and general-purpose applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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