KSC2383YTA
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 160V 1A TO92-3
TRANS NPN 160V 1A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3
Description
Description
The KSC2383YTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 160V and a collector current rating of 1A, this transistor operates effectively at frequencies up to 100MHz. It is housed in a TO-92-3 package, allowing for easy through-hole mounting. The device can handle a power dissipation of 900 mW, making it suitable for a wide range of electronic circuits, including signal processing and power management.
The KSC2383YTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 160V and a collector current rating of 1A, this transistor operates effectively at frequencies up to 100MHz. It is housed in a TO-92-3 package, allowing for easy through-hole mounting. The device can handle a power dissipation of 900 mW, making it suitable for a wide range of electronic circuits, including signal processing and power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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