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KSB834WYTM

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSB834WYTM is suitable for low frequency power amplifier applications in industrial and consumer electronics. Its robust specifications make it ideal for use in power management circuits, audio amplifiers, and other applications requiring reliable performance under varying conditions.
Specification
Specification
TRANS PNP 60V 3A D2PAK
TRANS PNP 60V 3A D2PAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 3 A 9MHz 1.5 W surface-mounted TO-263 (D2PAK)
Bipolar (BJT) Transistor PNP 60 V 3 A 9MHz 1.5 W surface-mounted TO-263 (D2PAK)
Description
Description
The KSB834WYTM is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a current gain bandwidth product of 9 MHz. This device is housed in a D2PAK (TO-263) package and is Pb-free.
The KSB834WYTM is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a current gain bandwidth product of 9 MHz. This device is housed in a D2PAK (TO-263) package and is Pb-free.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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