KSB1366GTU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 3A TO220F-3
TRANS PNP 60V 3A TO220F-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 3 A 9 MHz 2 W Through Hole TO-220F-3
Bipolar (BJT) Transistor PNP 60 V 3 A 9 MHz 2 W Through Hole TO-220F-3
Description
Description
The KSB1366GTU is a PNP bipolar junction transistor designed for low-frequency power amplification applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 2 W. The device operates at a frequency of up to 9 MHz and is housed in a TO-220F-3 package, making it suitable for through-hole mounting in various electronic circuits.
The KSB1366GTU is a PNP bipolar junction transistor designed for low-frequency power amplification applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 2 W. The device operates at a frequency of up to 9 MHz and is housed in a TO-220F-3 package, making it suitable for through-hole mounting in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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