KSB1015YTU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 3A TO220F-3
TRANS PNP 60V 3A TO220F-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 3 A 9 MHz 25 W Through Hole TO-220F-3
Bipolar (BJT) Transistor PNP 60 V 3 A 9 MHz 25 W Through Hole TO-220F-3
Description
Description
The KSB1015YTU is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 25W. The device operates with a current gain bandwidth product of 9MHz and has low collector-emitter saturation voltage, making it suitable for various applications.
The KSB1015YTU is a PNP bipolar junction transistor designed for low frequency power amplification. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 25W. The device operates with a current gain bandwidth product of 9MHz and has low collector-emitter saturation voltage, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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