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KSA1156YS

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSA1156YS is used in high voltage switching applications, low power switching regulators, and DC-DC converters. Its high breakdown voltage and low collector saturation voltage make it ideal for industrial and consumer electronics applications requiring reliable performance under high voltage conditions.
Specification
Specification
TRANS PNP 400V 0.5A TO126-3
TRANS PNP 400V 0.5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 400 V 500 mA 1 W Through Hole TO-126-3
Bipolar (BJT) Transistor PNP 400 V 500 mA 1 W Through Hole TO-126-3
Description
Description
The KSA1156YS is a PNP bipolar junction transistor (BJT) designed for high voltage applications. It features a collector-emitter voltage rating of 400 V, a collector current of 0.5 A, and a power dissipation of 1 W. This device is suitable for high-speed switching and low power switching regulators, packaged in a TO-126-3 case.
The KSA1156YS is a PNP bipolar junction transistor (BJT) designed for high voltage applications. It features a collector-emitter voltage rating of 400 V, a collector current of 0.5 A, and a power dissipation of 1 W. This device is suitable for high-speed switching and low power switching regulators, packaged in a TO-126-3 case.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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