JAN2N3637UB
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS PNP 175V 1A 3SMD
TRANS PNP 175V 1A 3SMD
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W surface-mounted UB
Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W surface-mounted UB
Description
Description
The JAN2N3637UB is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 175V and a continuous collector current rating of 1A, with a power dissipation capability of 1.5W. This surface-mounted device (SMD) is ideal for use in various electronic circuits requiring efficient switching and amplification. Its compact design allows for easy integration into space-constrained applications, making it suitable for modern electronic devices and systems.
The JAN2N3637UB is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 175V and a continuous collector current rating of 1A, with a power dissipation capability of 1.5W. This surface-mounted device (SMD) is ideal for use in various electronic circuits requiring efficient switching and amplification. Its compact design allows for easy integration into space-constrained applications, making it suitable for modern electronic devices and systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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