JAN2N3501UB
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 150V 0.3A UB
TRANS NPN 150V 0.3A UB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 150 V 300 mA 500 mW Surface Mount UB
Bipolar (BJT) Transistor NPN 150 V 300 mA 500 mW Surface Mount UB
Description
Description
The JAN2N3501UB is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 150V, a collector current rating of 300mA, and a power dissipation capability of 500mW. This surface-mounted device is ideal for switching and amplification tasks in compact circuit designs. Its robust construction ensures reliability in demanding environments, making it suitable for consumer electronics, automotive, and industrial applications.
The JAN2N3501UB is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 150V, a collector current rating of 300mA, and a power dissipation capability of 500mW. This surface-mounted device is ideal for switching and amplification tasks in compact circuit designs. Its robust construction ensures reliability in demanding environments, making it suitable for consumer electronics, automotive, and industrial applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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