J111-D26Z
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
JFET N-CH 35V TO92-3
JFET N-CH 35V TO92-3
Detailed specification
Detailed specification
JFET N-Channel 35 V 625 mW Through Hole TO-92-3
JFET N-Channel 35 V 625 mW Through Hole TO-92-3
Description
Description
The J111-D26Z from onsemi is an N-Channel JFET designed for applications requiring a maximum drain-source voltage of 35V and a power dissipation of 625 mW. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. The JFET features low noise and high input impedance, making it ideal for use in analog signal processing, RF amplification, and switching applications. Its robust design ensures reliable performance in various electronic circuits, providing engineers with a versatile component for their designs.
The J111-D26Z from onsemi is an N-Channel JFET designed for applications requiring a maximum drain-source voltage of 35V and a power dissipation of 625 mW. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. The JFET features low noise and high input impedance, making it ideal for use in analog signal processing, RF amplification, and switching applications. Its robust design ensures reliable performance in various electronic circuits, providing engineers with a versatile component for their designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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