IRFM120ATF
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 2.3A SOT223-4
MOSFET N-CH 100V 2.3A SOT223-4
Detailed specification
Detailed specification
N-Channel 100 V 2.3A (Ta) 2.4W (Ta) surface-mounted SOT-223-4
N-Channel 100 V 2.3A (Ta) 2.4W (Ta) surface-mounted SOT-223-4
Description
Description
The IRFM120ATF is an N-Channel MOSFET with a maximum Drain-Source Voltage (BVDSS) of 100 V and a continuous Drain Current (ID) of 2.3 A. It features a low on-state resistance (RDS(on)) of 0.2 Ω and a total power dissipation of 2.4 W. This device is housed in a SOT-223-4 package, making it suitable for surface-mounted applications in various electronic circuits.
The IRFM120ATF is an N-Channel MOSFET with a maximum Drain-Source Voltage (BVDSS) of 100 V and a continuous Drain Current (ID) of 2.3 A. It features a low on-state resistance (RDS(on)) of 0.2 Ω and a total power dissipation of 2.4 W. This device is housed in a SOT-223-4 package, making it suitable for surface-mounted applications in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Jan-Erik or one of our other skilled sales representatives. They'll help you find the right service option.C