IRF9510PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 100V 4A TO220AB
MOSFET P-CH 100V 4A TO220AB
Detailed specification
Detailed specification
P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB
P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB
Description
Description
The IRF9510PBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -4 A at a case temperature (Tc) of 25 °C. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.2 Ω at VGS = -10 V, and a maximum power dissipation of 43 W. It operates efficiently at temperatures up to 175 °C, making it suitable for demanding environments.
The IRF9510PBF is a P-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of -100 V and a continuous drain current (ID) of -4 A at a case temperature (Tc) of 25 °C. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.2 Ω at VGS = -10 V, and a maximum power dissipation of 43 W. It operates efficiently at temperatures up to 175 °C, making it suitable for demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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