IRF840STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 8A D2PAK
MOSFET N-CH 500V 8A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 8A (Tc) 125W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 8A (Tc) 125W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF840STRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 500 V and a continuous Drain Current (ID) of 8 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 0.85 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 125 W, and is designed for fast switching and ease of paralleling.
The IRF840STRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 500 V and a continuous Drain Current (ID) of 8 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 0.85 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 125 W, and is designed for fast switching and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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