IRF840SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 8A D2PAK
MOSFET N-CH 500V 8A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 8A (Tc) 3.1W (Ta), 125W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF840SPBF is a high-performance N-Channel MOSFET designed for applications requiring high voltage and current handling. It features a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 125W. Its low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V ensures efficient operation in demanding environments.
The IRF840SPBF is a high-performance N-Channel MOSFET designed for applications requiring high voltage and current handling. It features a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 125W. Its low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V ensures efficient operation in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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