IRF840LPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 8A TO263AB
MOSFET N-CH 500V 8A TO263AB
Detailed specification
Detailed specification
N-Channel 500 V 8A (Tc) 125W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 8A (Tc) 125W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF840LPBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263AB package and is compliant with RoHS and halogen-free standards.
The IRF840LPBF is a third-generation N-Channel Power MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263AB package and is compliant with RoHS and halogen-free standards.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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