IRF840ASTRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 8A D2PAK
MOSFET N-CH 500V 8A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 8A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 500 V 8A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Description
Description
The IRF840ASTRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, and a total gate charge (Qg) of 38nC, making it suitable for high-speed power switching applications. The device is housed in a D2PAK (TO-263) package, allowing for efficient thermal management and surface mounting.
The IRF840ASTRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 8A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.85Ω at VGS = 10V, and a total gate charge (Qg) of 38nC, making it suitable for high-speed power switching applications. The device is housed in a D2PAK (TO-263) package, allowing for efficient thermal management and surface mounting.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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