IRF830SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 4.5A D2PAK
MOSFET N-CH 500V 4.5A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 4.5A (Tc) 3.1W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF830SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 4.5A at a case temperature (Tc) of 25°C. It offers low on-state resistance (RDS(on)) of 1.5Ω at VGS of 10V, making it suitable for efficient power management in various electronic circuits.
The IRF830SPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 4.5A at a case temperature (Tc) of 25°C. It offers low on-state resistance (RDS(on)) of 1.5Ω at VGS of 10V, making it suitable for efficient power management in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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