IRF830ASPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 5A D2PAK
MOSFET N-CH 500V 5A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 5A (Tc) 3.1W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 5A (Tc) 3.1W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF830ASPBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.40Ω at VGS = 10V, and a total gate charge (Qg) of 24nC, making it suitable for efficient switching in power applications.
The IRF830ASPBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.40Ω at VGS = 10V, and a total gate charge (Qg) of 24nC, making it suitable for efficient switching in power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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