IRF830APBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 5A TO220AB
MOSFET N-CH 500V 5A TO220AB
Detailed specification
Detailed specification
N-Channel 500 V 5A (Tc) 74W (Tc) Through Hole TO-220AB
N-Channel 500 V 5A (Tc) 74W (Tc) Through Hole TO-220AB
Description
Description
The IRF830APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5A. It is housed in a TO-220AB package and supports a maximum power dissipation of 74W. The device exhibits low on-state resistance (RDS(on)) of 1.4Ω at VGS = 10V, making it suitable for efficient power switching applications.
The IRF830APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5A. It is housed in a TO-220AB package and supports a maximum power dissipation of 74W. The device exhibits low on-state resistance (RDS(on)) of 1.4Ω at VGS = 10V, making it suitable for efficient power switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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