IRF820STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 2.5A D2PAK
MOSFET N-CH 500V 2.5A D2PAK
Detailed specification
Detailed specification
N-Channel 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF820STRRPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V, making it suitable for efficient power management in various applications. The device is housed in a D2PAK (TO-263) surface mount package, allowing for effective thermal dissipation and compact design.
The IRF820STRRPBF is a N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 500V and a continuous Drain Current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V, making it suitable for efficient power management in various applications. The device is housed in a D2PAK (TO-263) surface mount package, allowing for effective thermal dissipation and compact design.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C