IRF820LPBF
Manufacturer
SILICONIX
Specification
Specification
MOSFET N-CH 500V 2.5A I2PAK
MOSFET N-CH 500V 2.5A I2PAK
Detailed specification
Detailed specification
N-Channel 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Through Hole I2PAK
N-Channel 500 V 2.5A (Tc) 3.1W (Ta), 50W (Tc) Through Hole I2PAK
Description
Description
The IRF820LPBF is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 500V and a continuous drain current rating of 2.5A at a case temperature (Tc). This device is housed in an I2PAK package, allowing for efficient thermal management with a power dissipation capability of 3.1W at ambient temperature (Ta) and up to 50W at Tc. Its robust construction makes it suitable for various power switching applications, ensuring reliable performance in demanding environments.
The IRF820LPBF is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage of 500V and a continuous drain current rating of 2.5A at a case temperature (Tc). This device is housed in an I2PAK package, allowing for efficient thermal management with a power dissipation capability of 3.1W at ambient temperature (Ta) and up to 50W at Tc. Its robust construction makes it suitable for various power switching applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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