IRF820APBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 500V 2.5A TO220AB
MOSFET N-CH 500V 2.5A TO220AB
Detailed specification
Detailed specification
N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
N-Channel 500 V 2.5A (Tc) 50W (Tc) Through Hole TO-220AB
Description
Description
The IRF820APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V and a maximum power dissipation of 50W. This device is housed in a TO-220AB package, making it suitable for through-hole mounting in various power applications.
The IRF820APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 2.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 3.0Ω at VGS of 10V and a maximum power dissipation of 50W. This device is housed in a TO-220AB package, making it suitable for through-hole mounting in various power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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