IRF740ASTRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 10A D2PAK
MOSFET N-CH 400V 10A D2PAK
Detailed specification
Detailed specification
N-Channel 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)
Description
Description
The IRF740ASTRRPBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 10A. It operates with a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, and has a total gate charge (Qg) of 36nC, making it suitable for efficient switching applications. The device is housed in a D2PAK (TO-263) package, ensuring robust thermal performance with a maximum power dissipation of 125W at Tc = 25°C.
The IRF740ASTRRPBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum Drain-Source Voltage (VDS) of 400V and a continuous Drain Current (ID) of 10A. It operates with a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, and has a total gate charge (Qg) of 36nC, making it suitable for efficient switching applications. The device is housed in a D2PAK (TO-263) package, ensuring robust thermal performance with a maximum power dissipation of 125W at Tc = 25°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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