IRF740APBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 10A TO220AB
MOSFET N-CH 400V 10A TO220AB
Detailed specification
Detailed specification
N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
Description
Description
The IRF740APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 10A. It is housed in a TO-220AB package and supports a maximum power dissipation of 125W. With a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, it offers efficient performance for power switching applications.
The IRF740APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 10A. It is housed in a TO-220AB package and supports a maximum power dissipation of 125W. With a low on-state resistance (RDS(on)) of 0.55Ω at VGS = 10V, it offers efficient performance for power switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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