IRF730PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 5.5A TO220AB
MOSFET N-CH 400V 5.5A TO220AB
Detailed specification
Detailed specification
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
Description
Description
The IRF730PBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, and a maximum power dissipation of 74W. This device is designed for fast switching applications and is suitable for commercial and industrial use.
The IRF730PBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 1.0Ω at VGS of 10V, and a maximum power dissipation of 74W. This device is designed for fast switching applications and is suitable for commercial and industrial use.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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