IRF730APBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 5.5A TO220AB
MOSFET N-CH 400V 5.5A TO220AB
Detailed specification
Detailed specification
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
Description
Description
The IRF730APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS = 10V and a maximum power dissipation of 74W. This device is suitable for switch mode power supplies and high-speed power switching applications.
The IRF730APBF is an N-Channel MOSFET designed for high voltage applications, featuring a maximum drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 5.5A at a case temperature (Tc) of 25°C. It has a low on-state resistance (RDS(on)) of 1.0Ω at VGS = 10V and a maximum power dissipation of 74W. This device is suitable for switch mode power supplies and high-speed power switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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