IRF710PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 400V 2A TO220AB
MOSFET N-CH 400V 2A TO220AB
Detailed specification
Detailed specification
N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB
N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB
Description
Description
The IRF710PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 400V, continuous drain current (ID) of 2A, and a power dissipation of 36W. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
The IRF710PBF is a third-generation N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (VDS) of 400V, continuous drain current (ID) of 2A, and a power dissipation of 36W. The device is housed in a TO-220AB package, offering low on-state resistance (RDS(on)) of 3.6Ω at VGS = 10V, making it suitable for efficient power management in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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