IRF640STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 18A TO263
MOSFET N-CH 200V 18A TO263
Detailed specification
Detailed specification
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF640STRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263 package, allowing for efficient thermal management and fast switching capabilities.
The IRF640STRRPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263 package, allowing for efficient thermal management and fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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