logo

IRF640STRLPBF

Manufacturer

SILICONIX

data-sheet
Data sheet
Data sheet
IRF640STRLPBF is designed for power management applications in industrial and automotive sectors. Its robust specifications, including a maximum power dissipation of 130W and a wide operating temperature range of -55 to +150 °C, make it ideal for high-performance circuits requiring reliable switching and low on-resistance.
Specification
Specification
MOSFET N-CH 200V 18A TO263
MOSFET N-CH 200V 18A TO263
Detailed specification
Detailed specification
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF640STRLPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263 package, allowing for efficient thermal management and fast switching capabilities.
The IRF640STRLPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a TO-263 package, allowing for efficient thermal management and fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.
Lukas Wallin
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.