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IRF640SPBF

Manufacturer

SILICONIX

data-sheet
Data sheet
Data sheet
IRF640SPBF is designed for power management applications in industrial and automotive sectors. Its robust specifications, including a maximum power dissipation of 130W and a high operating temperature of 150°C, make it ideal for use in power supplies, motor control, and other high-current applications.
Specification
Specification
MOSFET N-CH 200V 18A D2PAK
MOSFET N-CH 200V 18A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF640SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal management and fast switching capabilities.
The IRF640SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 18A. It features a low on-state resistance (RDS(on)) of 0.18Ω at VGS = 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) package, allowing for effective thermal management and fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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