IRF640PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 18A TO220AB
MOSFET N-CH 200V 18A TO220AB
Detailed specification
Detailed specification
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Description
Description
The IRF640PBF is an N-Channel MOSFET rated for 200V and 18A, housed in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.18 Ω at VGS = 10V), fast switching capabilities, and a maximum power dissipation of 125W. This third-generation power MOSFET is designed for high efficiency and reliability in various applications.
The IRF640PBF is an N-Channel MOSFET rated for 200V and 18A, housed in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.18 Ω at VGS = 10V), fast switching capabilities, and a maximum power dissipation of 125W. This third-generation power MOSFET is designed for high efficiency and reliability in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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