IRF630STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 9A D2PAK
MOSFET N-CH 200V 9A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 9A (Tc) 3W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 9A (Tc) 3W (Ta), 74W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF630STRRPBF is a N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 9A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 74W. It exhibits low on-state resistance (RDS(on)) of 0.40Ω at VGS of 10V, making it suitable for fast switching applications.
The IRF630STRRPBF is a N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 9A at a case temperature (Tc) of 25°C. The device is housed in a D2PAK (TO-263) package, providing excellent thermal performance with a maximum power dissipation of 74W. It exhibits low on-state resistance (RDS(on)) of 0.40Ω at VGS of 10V, making it suitable for fast switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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