IRF624PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 250V 4.4A TO220AB
MOSFET N-CH 250V 4.4A TO220AB
Detailed specification
Detailed specification
N-Channel 250 V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB
N-Channel 250 V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB
Description
Description
The IRF624PBF is a third-generation N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 250V, continuous drain current (ID) of 4.4A, and a power dissipation capability of 50W. The device is housed in a TO-220AB package, offering low thermal resistance and ease of use in commercial and industrial applications. With a low on-state resistance (RDS(on)) of 1.1Ω at VGS = 10V, it ensures efficient operation in demanding environments.
The IRF624PBF is a third-generation N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 250V, continuous drain current (ID) of 4.4A, and a power dissipation capability of 50W. The device is housed in a TO-220AB package, offering low thermal resistance and ease of use in commercial and industrial applications. With a low on-state resistance (RDS(on)) of 1.1Ω at VGS = 10V, it ensures efficient operation in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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