IRF620STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 5.2A D2PAK
MOSFET N-CH 200V 5.2A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) surface-mounted D2PAK
N-Channel 200 V 5.2A (Tc) 3W (Ta), 50W (Tc) surface-mounted D2PAK
Description
Description
The IRF620STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 5.2A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.80Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 50W, and is designed for fast switching and ease of paralleling.
The IRF620STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 5.2A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.80Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 50W, and is designed for fast switching and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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