IRF620PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 5.2A TO220AB
MOSFET N-CH 200V 5.2A TO220AB
Detailed specification
Detailed specification
N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
N-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
Description
Description
The IRF620PBF is an N-Channel MOSFET rated for 200V and 5.2A (Tc) with a maximum power dissipation of 50W in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.80 Ω at VGS = 10V), fast switching capabilities, and is designed for ease of paralleling. This third-generation power MOSFET is ideal for commercial and industrial applications requiring robust performance.
The IRF620PBF is an N-Channel MOSFET rated for 200V and 5.2A (Tc) with a maximum power dissipation of 50W in a TO-220AB package. It features low on-state resistance (RDS(on) = 0.80 Ω at VGS = 10V), fast switching capabilities, and is designed for ease of paralleling. This third-generation power MOSFET is ideal for commercial and industrial applications requiring robust performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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