IRF614STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 250V 2.7A D2PAK
MOSFET N-CH 250V 2.7A D2PAK
Detailed specification
Detailed specification
N-Channel 250 V 2.7A (Tc) 3.1W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 250 V 2.7A (Tc) 3.1W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF614STRRPBF is a N-Channel MOSFET with a maximum drain-source voltage (VDS) of 250V and a continuous drain current (ID) of 2.7A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 2.0Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, and is designed for fast switching and ease of paralleling.
The IRF614STRRPBF is a N-Channel MOSFET with a maximum drain-source voltage (VDS) of 250V and a continuous drain current (ID) of 2.7A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 2.0Ω at VGS of 10V, making it suitable for high-efficiency applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, and is designed for fast switching and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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