IRF614SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 250V 2.7A D2PAK
MOSFET N-CH 250V 2.7A D2PAK
Detailed specification
Detailed specification
N-Channel 250 V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 250 V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount TO-263 (D2PAK)
Description
Description
The IRF614SPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 250V and a continuous drain current (ID) of 2.7A at a case temperature (Tc) of 25°C. It offers low on-state resistance (RDS(on)) of 2.0Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, with fast switching capabilities and ease of paralleling.
The IRF614SPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum drain-source voltage (VDS) of 250V and a continuous drain current (ID) of 2.7A at a case temperature (Tc) of 25°C. It offers low on-state resistance (RDS(on)) of 2.0Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W, with fast switching capabilities and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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