IRF610STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 3.3A D2PAK
MOSFET N-CH 200V 3.3A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF610STRRPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W. The device exhibits low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high-efficiency applications.
The IRF610STRRPBF is a third-generation N-Channel MOSFET from Vishay Siliconix, featuring a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 3.3A at a case temperature (Tc) of 25°C. It is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36W. The device exhibits low on-state resistance (RDS(on)) of 1.5Ω at VGS = 10V, making it suitable for high-efficiency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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