IRF610SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 3.3A D2PAK
MOSFET N-CH 200V 3.3A D2PAK
Detailed specification
Detailed specification
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF610SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36 W, and is designed for fast switching and ease of paralleling.
The IRF610SPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A at a case temperature (Tc) of 25 °C. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 36 W, and is designed for fast switching and ease of paralleling.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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