IRF610PBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 3.3A TO220AB
MOSFET N-CH 200V 3.3A TO220AB
Detailed specification
Detailed specification
N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
N-Channel 200 V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
Description
Description
The IRF610PBF is an N-Channel MOSFET rated for 200V and 3.3A (Tc) with a maximum power dissipation of 36W (Tc). It is housed in a TO-220AB package, suitable for through-hole mounting. This device is designed for high-efficiency switching applications, providing reliable performance in various electronic circuits.
The IRF610PBF is an N-Channel MOSFET rated for 200V and 3.3A (Tc) with a maximum power dissipation of 36W (Tc). It is housed in a TO-220AB package, suitable for through-hole mounting. This device is designed for high-efficiency switching applications, providing reliable performance in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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