IRF610LPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 200V 3.3A I2PAK
MOSFET N-CH 200V 3.3A I2PAK
Detailed specification
Detailed specification
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) Through Hole I2PAK
N-Channel 200 V 3.3A (Tc) 3W (Ta), 36W (Tc) Through Hole I2PAK
Description
Description
The IRF610LPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in an I2PAK package, allowing for effective thermal management with a maximum power dissipation of 36 W.
The IRF610LPBF is an N-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of 200 V and a continuous Drain Current (ID) of 3.3 A. It features a low on-state resistance (RDS(on)) of 1.5 Ω at VGS = 10 V, making it suitable for high-efficiency applications. The device is housed in an I2PAK package, allowing for effective thermal management with a maximum power dissipation of 36 W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.C