IRF510STRRPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 5.6A TO263
MOSFET N-CH 100V 5.6A TO263
Detailed specification
Detailed specification
N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF510STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, and a maximum power dissipation of 43W at TC of 25°C. This surface-mounted TO-263 package is designed for high current applications, providing fast switching and rugged performance.
The IRF510STRRPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, and a maximum power dissipation of 43W at TC of 25°C. This surface-mounted TO-263 package is designed for high current applications, providing fast switching and rugged performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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