IRF510SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 5.6A D2PAK
MOSFET N-CH 100V 5.6A D2PAK
Detailed specification
Detailed specification
N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) surface-mounted TO-263 (D2PAK)
N-Channel 100 V 5.6A (Tc) 3.7W (Ta), 43W (Tc) surface-mounted TO-263 (D2PAK)
Description
Description
The IRF510SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
The IRF510SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 5.6A at a case temperature (Tc) of 25°C. It features a low on-state resistance (RDS(on)) of 0.54Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a D2PAK (TO-263) surface mount package, capable of dissipating up to 43W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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