HUF75321P3
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
POWER FIELD-EFFECT TRANSISTOR, 3
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed specification
Detailed specification
N-Channel 55 V 35A (Tc) 93W (Tc) Through Hole TO-220-3
N-Channel 55 V 35A (Tc) 93W (Tc) Through Hole TO-220-3
Description
Description
The HUF75321P3 is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for efficient switching and amplification applications. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) rating of 35 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 93 W (Tc), making it suitable for high-power applications. Packaged in a TO-220-3 through-hole configuration, it offers excellent thermal performance and ease of mounting in various electronic circuits.
The HUF75321P3 is a high-performance N-Channel Power Field-Effect Transistor (FET) designed for efficient switching and amplification applications. It features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) rating of 35 A at a case temperature (Tc) of 25°C. The device can handle a power dissipation of up to 93 W (Tc), making it suitable for high-power applications. Packaged in a TO-220-3 through-hole configuration, it offers excellent thermal performance and ease of mounting in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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