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HS2907A

Manufacturer

MICROCHIP TECHNOLOGY

HS2907A NPN Transistor is typically used in signal amplification, switching applications, and as a driver for relays and motors. It is ideal for consumer electronics, automotive systems, and industrial control circuits where efficient performance and reliability are critical.
Specification
Specification
NPN TRANSISTOR
NPN TRANSISTOR
Detailed specification
Detailed specification
Bipolar (BJT) Transistor with dimensions of 10 mm (0.39 inches) in length and 5 mm (0.20 inches) in width. It features RDS(on) and a thick film resistor (tjockfilmsmotstånd) with a power rating that can withstand a power (tål en effekt) of 1 W. The core is designed with a drum-shaped core (trumformad kärna) and is wire-wound (trådlindad). This component is of surface mount type (surface-mounted).
Bipolar (BJT) Transistor with dimensions of 10 mm (0.39 inches) in length and 5 mm (0.20 inches) in width. It features RDS(on) and a thick film resistor (tjockfilmsmotstånd) with a power rating that can withstand a power (tål en effekt) of 1 W. The core is designed with a drum-shaped core (trumformad kärna) and is wire-wound (trådlindad). This component is of surface mount type (surface-mounted).
Description
Description
The HS2907A is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It features low saturation voltage and high current gain, making it suitable for use in low-power and medium-power circuits. The device is capable of handling a maximum collector current of 800 mA and has a maximum collector-emitter voltage of 40 V. Its compact design allows for easy integration into surface-mounted applications, ensuring efficient thermal management and reliability in electronic systems.
The HS2907A is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It features low saturation voltage and high current gain, making it suitable for use in low-power and medium-power circuits. The device is capable of handling a maximum collector current of 800 mA and has a maximum collector-emitter voltage of 40 V. Its compact design allows for easy integration into surface-mounted applications, ensuring efficient thermal management and reliability in electronic systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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