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Manufacturers

HN1C03F-B(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
HN1C03F-B(TE85L,F) is designed for muting and switching applications in various domains including consumer electronics and telecommunications. Its specifications make it suitable for use in low-power circuits where space-saving surface mount technology is essential, ensuring efficient performance in compact designs.
Specification
Specification
TRANS 2NPN 20V 0.3A SM6
TRANS 2NPN 20V 0.3A SM6
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 300mW Surface Mount SM6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 300mW Surface Mount SM6
Description
Description
The HN1C03F-B(TE85L,F) is a bipolar NPN transistor array featuring two NPN transistors in a surface-mounted SM6 package. It operates at a maximum collector-emitter voltage of 20V and a collector current of 300mA, with a transition frequency of 30MHz. The device is suitable for muting and switching applications, offering low on-state resistance (RON) of 1Ω and high reverse hFE typical of 150.
The HN1C03F-B(TE85L,F) is a bipolar NPN transistor array featuring two NPN transistors in a surface-mounted SM6 package. It operates at a maximum collector-emitter voltage of 20V and a collector current of 300mA, with a transition frequency of 30MHz. The device is suitable for muting and switching applications, offering low on-state resistance (RON) of 1Ω and high reverse hFE typical of 150.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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