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Manufacturers

HN1C01F-Y(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
HN1C01F-Y(TE85L,F) is utilized in general-purpose amplification and switching applications in electronic circuits. Typical applications include signal processing, power management, and control systems, where reliable performance and compact design are essential.
Detailed specification
Detailed specification
Trans GP BJT NPN 50V 0.15A 6-Pin surface mount T/R
Trans GP BJT NPN 50V 0.15A 6-Pin surface mount T/R
Description
Description
The HN1C01F-Y(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) of 0.15A, making it suitable for various electronic circuits. Packaged in a compact 6-pin surface mount configuration, this transistor offers efficient thermal management and space-saving benefits, ideal for modern electronic designs requiring reliable performance in a small footprint.
The HN1C01F-Y(TE85L,F) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It operates with a maximum collector-emitter voltage (Vce) of 50V and a collector current (Ic) of 0.15A, making it suitable for various electronic circuits. Packaged in a compact 6-pin surface mount configuration, this transistor offers efficient thermal management and space-saving benefits, ideal for modern electronic designs requiring reliable performance in a small footprint.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Patrick Wiström031-338 96 64patrick.wistrom@westcomp.se
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Petra Målberg031-338 96 79petra.malberg@westcomp.se
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Richard Mattsson031-338 96 84richard.mattsson@westcomp.se
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