HN1C01FU-GR,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Trans GP BJT NPN 50V 0.15A 200mW 6-Pin US T/R
Description
Description
The HN1C01FU-GR,LF(T) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 0.15A, and a power dissipation of 200mW. Packaged in a compact 6-pin US configuration, this transistor is suitable for various electronic circuits requiring reliable performance in low to moderate power applications. Its robust design ensures efficient operation in diverse environments.
The HN1C01FU-GR,LF(T) from Toshiba is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage (Vce) of 50V, a collector current (Ic) rating of 0.15A, and a power dissipation of 200mW. Packaged in a compact 6-pin US configuration, this transistor is suitable for various electronic circuits requiring reliable performance in low to moderate power applications. Its robust design ensures efficient operation in diverse environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C