HN1B04FU-GR,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R
Description
Description
The HN1B04FU-GR,LF(T) from Toshiba is a high-performance transistor featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and can handle a collector current of up to 0.15A, with a power dissipation of 200mW. This 6-pin US package is designed for efficient thermal management and compact circuit designs. Ideal for various switching and amplification applications, it ensures reliable performance in consumer electronics and industrial systems, making it a versatile choice for engineers.
The HN1B04FU-GR,LF(T) from Toshiba is a high-performance transistor featuring both NPN and PNP configurations. It operates at a maximum collector-emitter voltage of 50V and can handle a collector current of up to 0.15A, with a power dissipation of 200mW. This 6-pin US package is designed for efficient thermal management and compact circuit designs. Ideal for various switching and amplification applications, it ensures reliable performance in consumer electronics and industrial systems, making it a versatile choice for engineers.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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